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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 40 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM4301ZPT
CURRENT 6.3 Ampere
FEATURE
* Small flat package. ( SC-73/SOT-223 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability.
6.50+0.20 3.00+0.10
SC-73/SOT-223
1.65+0.15 0.90+0.05 2.0+0.3
CONSTRUCTION
* P-Channel Enhancement
0.70+0.10 0.70+0.10 2.30+0.1
3.5+0.2
7.0+0.3
0.9+0.2
2.0+0.3
0.70+0.10 4.60+0.1
0.27+0.05 0.01~0.10
1 1 Gate
3
2
CIRCUIT
1G
3
D
2 Source 3 Drain ( Heat Sink )
2S
Dimensions in millimeters
SC-73/SOT-223
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise noted
CHM4301ZPT
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
-40
V V
20
-6.3
ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range
(Note 3)
A -25 3000 -55 to 150 -55 to 150 mW C C
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 C/W
2008-01
RATING CHARACTERISTIC ( CHM4301ZPT )
Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = -250 A VDS = -32 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
-40 -1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = -250 A VGS=-10V, ID=-6A VGS=-4.5V, ID=-3A
-1 36 52 5
-3 44
V m
68 S
Forward Transconductance
VDS = -5V, ID = -6A
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -20V, VGS = 0V, f = 1.0 MHz 1110 200 115 pF
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q gd ton tr toff tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=-20V, ID=-5A VGS=-10V V DD= -20V I D = -5.0A , VGS = -10 V RGEN= 3
20 3.2 4.2 11 4 39 12
26 nC
22 8 68 24 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current
(Note 1)
-6 -1.3
A V
Drain-Source Diode Forward Voltage IS = -1.0A , VGS = 0 V (Note 2)
RATING CHARACTERISTIC CURVES ( CHM4301ZPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
10 10
Figure 2. Transfer Characteristics
V G S =-1 0 , - 6 , - 5 V
8
-I D , DRAIN CURRENT (A)
6
-I D , DRAIN CURRENT (A)
8
6
4
VG S =-3 . 0 V
4 J=125C T 2
TJ=-55C TJ=25C
2
0
0
1.0
2.0 3.0 4.0 -VDS , DRAIN-TO-SOURCE VOLTAGE (V)
5.0
0
0
3.0 4.0 2.0 1.0 -VGS , GATE-TO-SOURCE VOLTAGE (V)
5.0
Figure 3. Gate Charge
10 VDS=-20V ID=-5A 2.2 1.9
Figure 4. On-Resistance Variation with Temperature
VGS=-10V ID=-6.3A
-VGS , GATE TO SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
8
R DS(on) , NO RMALIZED
1.6
6
1.3
4
1.0
2
0.7
0 0 4 8 12 Qg , TOTAL GATE CHARGE (nC) 16 20
0.4 -100
-50
0 50 100 TJ , JUNCTION T EMPERATURE (C)
150
200
Figure 5. Gate Threshold Variation with Temperature
1.3 1.2 VDS=VGS ID=250uA
Vth , NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1 1.0 0.9 0.8
0.7 0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C)
125
150

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